impurity concentration中文是什么意思

• 杂质浓度

• "impurity"中文翻译    n. 〔常用 pl.〕 1.不纯，不洁。 2.下流，不道 ...
• "concentration"中文翻译    n. 1.集中。 2.【化学】提浓，蒸浓，浓缩；浓度；稠 ...
• "concentration, impurity" 中文翻译 :    杂质浓度
• "emitter impurity concentration" 中文翻译 :    发射区杂质浓度
• "graded impurity concentration" 中文翻译 :    缓变杂质浓度
• "grain boundary impurity concentration" 中文翻译 :    晶界杂质浓度
• "impurity" 中文翻译 :    n. 〔常用 pl.〕 1.不纯，不洁。 2.下流，不道德，不贞节，杂质。 impurities in food 食物中的杂质。 political impurities 政治渣滓；牛鬼蛇神。
• "concentration" 中文翻译 :    n. 1.集中。 2.【化学】提浓，蒸浓，浓缩；浓度；稠密度；【矿物】汰选，选矿，富化。 3.集中注意，专心。 multi-stage ore concentration多段选矿法。 with deep concentration专心。
• "concentration of no" 中文翻译 :    一氧化碳浓度
• "concentration on" 中文翻译 :    注意力集中于
• "a orption impurity" 中文翻译 :    吸收杂质
• "absorption impurity" 中文翻译 :    吸收杂质; 吸收沾染
• "acceptor impurity" 中文翻译 :    受素不纯物; 受体杂质; 受钟质; 受主杂质
• "accompanying impurity" 中文翻译 :    伴生杂质
• "active impurity" 中文翻译 :    活性杂质
• "amphoteric impurity" 中文翻译 :    两性杂质
• "anode impurity" 中文翻译 :    阳极杂质
• "anodic impurity" 中文翻译 :    阳极杂质
• "applied impurity" 中文翻译 :    羊毛外加杂质
• "atomic impurity" 中文翻译 :    原子型杂质
• "background impurity" 中文翻译 :    本底杂质
• "band impurity" 中文翻译 :    谱带杂质
• "base impurity" 中文翻译 :    基区杂质
• "chemical impurity" 中文翻译 :    化学的不纯物; 化学杂质
• "chief impurity" 中文翻译 :    主要杂质

• Test method for residual impurities concentration in microzone of semi - insulating gallium arsenide
  半绝缘砷化镓剩余杂质浓度微区试验方法
• Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
  用光致发光光谱法测定硅晶体中杂质浓度的试验方法
• The grown solution of dkdp crystal was synthesized firstly , then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations
  本文首先合成了dkdp晶体生长溶液，测定了合成溶液中部分杂质金属离子的含量，讨论了杂质金属离子浓度和临界过饱和度之间的关系。
• The dislocation - free , low defects densities crystal are acquired , in which the impurities concentration is decreased , their distribution are uniform , and the gaas crystal has high uniform and purity characteristics
  利用m - lec法可以消除单晶中的位错，降低缺陷密度，降低单晶中的杂质含量，并能使杂质在晶体中的分布均匀，得到晶体均匀性、纯净度都高的gaas单晶。
• Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
  采用数值模拟分析方法,深入研究了漂移区长度、漂移区浓度、埋氧层厚度、顶层硅厚度、氧化层电荷以及衬底偏压对resurf效应、击穿电压和导通电阻的影响。
• From then on , the above two shortcomings had been overcome . impurity concentration and junction depth can be accurately controlled and freely adjusted . both low and high dopant concentration can be gained easily , and ideal distribution of ga in si can also be achieved with uniform surface concentration , good repeatability and high eligibility and excellence ratio , which have greatly improved comprehensive performances of the devices
  此工艺发明以来，克服了上述两者的弊端，杂质浓度和结深能准确控制而又能任意调整，可进行低、高浓度阶段性掺杂，得到元素ga在si中的理想分布，而且表面浓度均匀一致、重复性好、合格率和优品率高，改善和提高了器件的综合性能。

• impurity concentration artinya
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